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Trimethylaluminum (TMAI) is a critical raw material for the production of other metal-organic sources utilized in atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes.
Trimethylaluminum represents one of the simplest organoaluminum compounds. Although its name suggests a monomeric structure, it actually has the formula Al2(CH3)6 (abbreviated as Al2Me6 or TMAI), existing as a dimer. This colorless liquid is pyrophoric and plays an industrially significant role, closely related to triethylaluminum.
UrbanMines ranks among the leading suppliers of Trimethylaluminum (TMAI) in China. Leveraging our advanced production techniques, we offer TMAI with varying levels of purity, tailored specifically for applications in the semiconductor, solar cell, and LED industries.
Trimethylalumane(TMAI)
| Synonyms | Trimethylaluminum, Aluminium Trimethyl,Aluminum Trimethanide, TMA, TMAL, AlMe3, Ziegler-Natta Catalyst, Trimethyl-, Trimethylalane. |
| Cas Number | 75-24-1 |
| Chemical formula | C6H18Al2 |
| Molar mass | 144.17 g/mol, 72.09 g/mol (C3H9Al) |
| Appearance | Colorless liquid |
| Density | 0.752 g/cm3 |
| Melting point | 15℃ (59 ℉; 288K) |
| Boiling point | 125--130℃ (257--266 ℉, 398--403K) |
| Solubility in water | Reacts |
| Vapor pressure | 1.2 kPa (20℃), 9.24 kPa (60℃) |
| Viscosity | 1.12 cP (20℃), 0.9 cP (30℃) |
Trimethylaluminum (TMAl), as a metal-organic (MO) source, is widely utilized in the semiconductor industry and serves as a key precursor for atomic layer deposition (ALD), chemical vapor deposition (CVD), and metal-organic chemical vapor deposition (MOCVD). It is employed to prepare high-purity aluminum-containing films, such as aluminum oxide and aluminum nitride. Additionally, TMAl finds extensive application as a catalyst and its auxiliary agent in organic synthesis and polymerization reactions.
Trimethylaluminum (TMAI) acts as a precursor for aluminum oxide deposition and functions as a Ziegler-Natta catalyst. It is also the most commonly used aluminum precursor in the production of metal-organic vapor-phase epitaxy (MOVPE). Furthermore, TMAI serves as a methylation agent and is frequently released from sounding rockets as a tracer for studying upper atmospheric wind patterns.
Enterprise specification of 99.9999% Trimethylaluminum - Low silicon and low oxygen content(6N TAMI-Low Si and Low Ox)
| Element | Result | Specification | Element | Result | Specification | Element | Result | Specification |
| Ag | ND | <0.03 | Cr | ND | <0.02 | S | ND | <0.05 |
| As | ND | <0.03 | Cu | ND | <0.02 | Sb | ND | <0.05 |
| Au | ND | <0.02 | Fe | ND | <0.04 | Si | ND | ≤0.003 |
| B | ND | <0.03 | Ge | ND | <0.05 | Sn | ND | <0.05 |
| Ba | ND | <0.02 | Hg | ND | <0.03 | Sr | ND | <0.03 |
| Be | ND | <0.02 | La | ND | <0.02 | Ti | ND | <0.05 |
| Bi | ND | <0.03 | Mg | ND | <0.02 | V | ND | <0.03 |
| Ca | ND | <0.03 | Mn | ND | <0.03 | Zn | ND | <0.05 |
| Cd | ND | <0.02 | Ni | ND | <0.03 | |||
| Co | ND | <0.02 | Pb | ND | <0.03 |
Note:
Above all value PPM by weight on metal,and ND=not detected
Analysis Method: ICP-OES/ICP-MS
FT-NMR results(LOD for FT-NMR organic and oxygenated impurity is 0.1ppm):
Oxygen guarantee <0.2 ppm(Measured in FT-NMR)
1.No Organic impu rities detected
2.No Oxygenated impurities detected
What is Trimethylaluminum (TMAI) used for?
Trimethylaluminum (TMA) - Applications and Uses
Trimethylaluminum (TMA) is an ultra-high-purity organoaluminum compound that serves as a critical precursor in some of the most advanced manufacturing sectors. Its exceptional reactivity and vapor pressure make it the material of choice for depositing precise aluminum-containing films in electronics and energy technologies, as well as a foundational component in polyolefin production.
Our TMA is manufactured to the most stringent purity standards, with rigorous control over elemental, oxygenated, and organic impurities to ensure optimal performance in your most demanding applications.
Primary Applications and Industries:
1. Semiconductor & Microelectronics Fabrication
In the semiconductor industry, TMA is indispensable for depositing thin films with atomic-scale precision.
* High-k Dielectrics: Used in Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) to grow uniform, pinhole-free thin films of aluminum oxide (Al₂O₃), which serve as high-k gate dielectrics in advanced transistors and memory devices.
* Compound Semiconductors: The preferred aluminum source in Metalorganic Vapor Phase Epitaxy (MOVPE) for growing high-performance III-V compound semiconductors. These materials are essential for:
* High-Frequency Electronics: (e.g., AlGaAs, AlInGaP)
* Optoelectronics: (e.g., AlGaN, AlInGaN)
2. Clean Energy & Photovoltaics
TMA enables higher efficiency and durability in solar energy technologies.
* Surface Passivation Layers: Deposited via ALD or Plasma-Enhanced CVD (PECVD), aluminum oxide (Al₂O₃) films from TMA provide outstanding surface passivation for crystalline silicon solar cells. This drastically reduces charge carrier recombination, leading to significant gains in cell conversion efficiency and long-term stability.
3. Advanced Lighting & Display (LED)
The production of high-brightness and energy-efficient LEDs relies on high-purity TMA.
* LED Epitaxy: Serves as the aluminum precursor in MOVPE reactors to grow the active layers (e.g., AlGaN) in blue, green, and ultraviolet LEDs.
* Device Passivation: Used to deposit protective aluminum oxide or aluminum nitride films that enhance optical extraction efficiency and prolong the operational lifespan of LED devices.
4. Industrial Catalysis & Polymer Production
TMA's industrial significance is rooted in its role in catalysis.
* Polyolefin Catalysis: It is the primary starting material for the synthesis of Methylaluminoxane (MAO), a crucial co-catalyst in Ziegler-Natta and metallocene catalyst systems. These systems produce the vast majority of the world's polyethylene and polypropylene plastics.
Key Characteristics & Benefits:
* Ultra-High Purity: Meticulously controlled to minimize impurities that degrade electronic performance and catalytic activity.
* Superior Precursor: Offers excellent volatility, thermal stability, and clean decomposition characteristics for high-quality film deposition.
* Industry Standard: The established, trusted aluminum source for MOVPE, ALD, and CVD processes across global R&D and production facilities.
* Foundation for Plastics: A key raw material enabling the production of versatile and essential polyolefin polymers.
Disclaimer: Trimethylaluminum is a pyrophoric and moisture-sensitive material that requires specialized handling and safety protocols. The information provided is for descriptive purposes. It is the user's responsibility to handle this material according to all applicable safety guidelines and to determine its suitability for a specific application.
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